Defect-free semiconductor templates for epitaxial growth

Patent No. 7,101,444

Issued: September 5, 2006
Filed: January 23, 2004
Priority: May 9, 2001

Inventors: Shchukin; Vitaly (Berlin, DE), Ledentsov; Nikolai (Berlin, DE)
Assignee: NL Nanosemiconductor GmbH (Dortmund, DE) 


A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation rate and a plurality of defects, where the surface comprises at least one defect-free surface region, and at least one surface region in a vicinity of the defects, the method including the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.

REFERENCE TO RELATED APPLICATIONS

This is a divisional of U.S. patent application Ser. No. 10/456,377, filed Jun. 6, 2003 now U.S. Pat. No. 6,784,074, entitled DEFECT-FREE SEMICONDUCTOR TEMPLATES FOR EPITAXIAL GROWTH AND METHOD FOR MAKING SAME, which is a continuation-in-part of U.S. patent application Ser. No. 09/851,730, filed May 9, 2001, entitled "SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME", now U.S. Pat. No. 6,653,166. The aforementioned applications are hereby incorporated herein by reference.


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